KRC286M transistor equivalent, (krc281m - krc286m) epitaxial planar npn transistor.
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resisto.
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